j/sst201 series vishay siliconix new product document number: 70233 s-03006?rev. f, 17-feb-03 www.vishay.com 6-1 n-channel jfets j201 sst201 j202 sst202 j204 SST204 product summary part number v gs(off) (v) v (br)gss min (v) g fs min (ms) i dss min (ma) j/sst201 -0.3 to -1.5 -40 0.5 0.2 j/sst202 - 0.8 to - 4 -40 1 0.9 j/SST204 - 0.3 to - 2 -25 0.5 0.2 features benefits applications low cutoff voltage: j201 <1.5 v high input impedance very low noise high gain: a v = 80 @ 20 a full performance from low voltage power supply: down to 1.5 v low signal loss/system error high system sensitivity high quality low-level signal amplification high-gain, low-noise amplifiers low-current, low-voltage battery-powered amplifiers infrared detector amplifiers ultra high input impedance pre-amplifiers description the j/sst201 series features low leakage, very low noise, and low cutoff voltage for use with low-level power supplies. the j/sst201 is excellent for battery powered equipment and low current amplifiers. the j series, to-226 (to-92) plastic package, provides low cost, while the sst series, to-236 (sot-23) package, provides surface-mount capability. both the j and sst series are available in tape-and-reel for automated assembly (see packaging information). for similar products in t o-206aa (to-18) packaging, see the 2n4338/4339/4340/4341 data sheet. for applications information see an102 and an106. to-226aa (to-92) top view j201 j202 j204 d g s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst201 (p1)* sst202 (p2)* SST204 (p4)* *marking code for to-236
j/sst201 series vishay siliconix new product www.vishay.com 6-2 document number: 70233 s-03006?rev. f, 17-feb-03 absolute maximum ratings gate-drain, gate-source voltage -40 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . storage temperature -55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature - 55 to 150 c . . . . . . . . . . . . . . . . . . . . . . . . . power dissipation a 350 mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . notes a . derate 2.8 mw/ c above 25 c specifications (t a = 25 c unless otherwise noted) limits j/sst201 j/sst202 j/SST204 c parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = -1 a , v ds = 0 v -40 -40 -25 v gate-source cutoff voltage v gs(off) v ds = 15 v, i d = 10 na -0.3 -1.5 -0.8 -4 -0.3 -2 v saturation drain current b i dss v ds = 15 v, v gs = 0 v 0.2 1 0.9 4.5 0.2 3 ma gate reverse current i gss v gs = -20 v, v ds = 0 v -2 -100 -100 -100 pa gate reverse current i gss t a = 125 c -1 na gate operating current i g v dg = 10 v, i d = 0.1 ma -2 pa drain cutoff current i d(off) v ds = 15 v, v gs = -5 v 2 pa gate-source forward voltage v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward t ransconductance g fs v ds = 15 v, v gs = 0 v f = 1 khz 0.5 1 0.5 ms common-source input capacitance c iss v ds = 15 v, v gs = 0 v 4.5 pf common-source reverse transfer capacitance c rss v ds = 15 v , v gs = 0 v f = 1 mhz 1.3 pf equivalent input noise voltage e n v ds = 10 v, v gs = 0 v f = 1 khz 6 nv ? hz notes a. typical values are for design aid only, not guaranteed nor subject to production testing. npa, nh b. pulse test: pw 300 s duty cycle 3%. c. see 2n/sst5484 series for j204 typical characteristic curves.
j/sst201 series vishay siliconix new product document number: 70233 s-03006?rev. f, 17-feb-03 www.vishay.com 6-3 typical characteristics (t a = 25 c unless otherwise noted) gate leakage current 2 01216 8 420 1.6 1.2 0.8 0.4 0 output characteristics v ds - drain-source voltage (v) v gs = 0 v -0.6 v -0.9 v -0.3 v v gs(off) = -1.5 v -1.2 v on-resistance and output conductance vs. gate-source cutoff voltage drain current and transconductance vs. gate-source cutoff voltage 10 0.1 pa 1 pa 10 pa 100 pa 1 na 10 na 01530 v dg - drain-gate voltage (v) i gss @ 125 c i gss @ 25 c t a = 125 c t a = 25 c i d = 100 a i d = 500 a i g @ i d = 500 a i d = 100 a 0 8 6 4 2 0-5 -4 -3 -2 -1 5 4 1 3 2 0 v gs(off) - gate-source cutoff voltage (v) i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz g fs i dss 1500 0-3-5 -4 -2 -1 1200 900 600 300 0 0.01 0.1 1 2 1.6 0.8 0.4 0 10 8 4 2 0 400 01216 420 360 160 80 0 output characteristics common-source forward transconductance vs. drain current i d - drain current (ma) v gs(off) - gate-source cutoff voltage (v) v ds - drain-source voltage (v) t a = -55 c 125 c -0.2 v -0.4 v -0.1 v -0.3 v r ds @ i d = 100 a, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v, f = 1 khz r ds g os 6 1.2 240 8 v gs(off) = -0.7 v 25 c -0.5 v v ds = 10 v f = 1 khz v gs(off) = -1.5 v v gs = 0 v g os - output conductance ( s) i dss - saturation drain current (ma) r ds(on) - drain-source on-resistance ( ? ) g fs - forward transconductance (ms) i d - drain current (ma) i d - drain current ( a) i g - gate leakage (a) g fs - forward transconductance (ms)
j/sst201 series vishay siliconix new product www.vishay.com 6-4 document number: 70233 s-03006?rev. f, 17-feb-03 typical characteristics (t a = 25 c unless otherwise noted) 2 0 -1.2 -1.6 -2 -0.8 -0.4 1.6 1.2 0.8 0.4 0 transfer characteristics v gs - gate-source voltage (v) t a = -55 c 125 c 25 c v ds = 10 v v gs(off) = -1.5 v 500 0 -0.3 -0.2 -0.1 -0.4 -0.5 400 300 200 100 0 transfer characteristics v gs - gate-source voltage (v) t a = -55 c 125 c 25 c v ds = 10 v v gs(off) = -0.7 v 0.1 1 0.01 4 -1.2 -2 -1.6 -0.8 -0.4 0 3.2 2.4 1.6 0.8 0 0.01 0.1 1 200 160 120 80 40 0 2000 1600 1200 800 400 0 i d - drain current (ma) circuit voltage gain vs. drain current transconductance vs. gate-source voltage t a = -55 c 125 c v gs - gate-source voltage (v) on-resistance vs. drain current i d - drain current (ma) 25 c v gs(off) = -0.7 v -1.5 v v gs(off) = -0.7 v -1.5 v 1.5 0 -0.3 -0.4 -0.2 -0.1 -0.5 1.2 0.9 0.6 0.3 0 transconductance vs. gate-source voltage t a = -55 c 125 c v gs - gate-source voltage (v) 25 c v ds = 10 v f = 1 khz v gs(off) = -0.7 v v ds = 10 v f = 1 khz v gs(off) = -1.5 v a v g fs r l 1 r l g os assume v dd = 15 v, v ds = 5 v r l 10 v i d g fs - forward transconductance (ms) g fs - forward transconductance (ms) r ds(on) - drain-source on-resistance ( ? ) i d - drain current (ma) i d - drain current ( a) a v - voltage gain
j/sst201 series vishay siliconix new product document number: 70233 s-03006?rev. f, 17-feb-03 www.vishay.com 6-5 typical characteristics (t a = 25 c unless otherwise noted) common-source input capacitance vs. gate-source voltage 10 0 -12 -16 -20 -8 -4 8 6 4 2 0 5 0 -12 -20 -16 -8 -4 4 3 2 1 0 common-source reverse feedback capacitance vs. gate-source voltage v gs - gate-source voltage (v) v ds = 0 v 10 v f = 1 mhz v gs - gate-source voltage (v) v ds = 0 v 10 v f = 1 mhz 10 100 1 k 100 k 10 k 20 16 12 8 4 0 output conductance vs. drain current i d - drain current (ma) t a = -55 c 125 c equivalent input noise voltage vs. frequency f - frequency (hz) v ds = 10 v i d @ 100 a v gs = 0 v 3 2.4 1.8 0.8 0.4 0 0.01 0.1 1 25 c output characteristics 300 0 0.5 240 180 120 60 0 v ds - drain-source voltage (v) 0.1 0.2 0.3 0.4 output characteristics 1.0 0 1.0 0.8 0.6 0.4 0.2 0 v ds - drain-source voltage (v) 0.2 0.4 0.6 0.8 v gs(off) = -0.7 v v gs = 0 v -0.1 -0.2 -0.3 -0.4 -0.5 v gs(off) = -1.5 v v gs = 0 v -0.3 -0.6 -0.9 -1.2 v ds = 10 v f = 1 khz v gs(off) = -1.5 v e n - noise voltage nv / hz i d - drain current (ma) i d - drain current ( a) g os - output conductance ( s) c iss - input capacitance (pf) c rss - reverse feedback capacitance (pf)
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